| PART |
Description |
Maker |
| K4S161622H |
16Mb H-die SDRAM Specification
IC,SDRAM,2X512KX16,CMOS,TSOP,50PIN,PLASTIC
|
Samsung semiconductor
|
| IBM0316809C |
(IBM031xxxxC) 16Mb SDRAM
|
IBM Microelectronics
|
| MT58L1MY18D MT58L512Y32D MT58L512Y36D MT58V512V36D |
16Mb SYNCBURST⑩ SRAM
16Mb SYNCBURST SRAM
|
MICRON[Micron Technology]
|
| HY5V66GF HY5V66GF-H HY5V66GF-P |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM
4Mx16|3.3V|4K|H|SDR SDRAM - 64M
x16 SDRAM x16内存
|
Hynix Semiconductor
TT electronics Semelab, Ltd.
|
| IBM0325404CT3A-75A IBM03254B4CT3A-75A IBM0325804CT |
x16 SDRAM
x8 SDRAM x8 SDRAM内存
x4 SDRAM Module x4内存模块
|
Electronic Theatre Controls, Inc.
Hanbit Electronics Co., Ltd.
|
| UPD4516821AG5-A12-7JF UPD4516421AG5-A12-7JF UPD451 |
x8 SDRAM
x4 SDRAM x4内存
x16 SDRAM x16内存
|
NEC, Corp.
Infineon Technologies AG
|
| BC369-10 |
16Mb EDO/FPM - OBSOLETE 晶体
|
SIEMENS AG
|
| VG3617161BT VG3617161BT-55 VG3617161BT-6 VG3617161 |
16Mb CMOS Synchronous Dynamic RAM
|
ETC[ETC]
|
| DS2070W-100 DS2070W |
3.3V Single-Piece 16Mb Nonvolatile SRAM
|
MAXIM[Maxim Integrated Products]
|
| DS3816C-512 |
From old datasheet system
16Mb Advanced NV SRAM with Clock
|
MAXIM - Dallas Semiconductor
|
